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Silicon Carbide Ceramic is formed in two ways, Reaction Bonding and Sintering.Each forming method greatly affects the end microstructure. Reaction bonded Silicon Carbide ceramic(RBSIC or SISIC) is made by infiltrating compacts made of mixtures of SiC and Carbon with liquid Silicon. The Silicon reacts with the Carbon forming more SiC which bonds the initial SiC particles. Sintered Silicon Carbide ceramic(SSiC) is produced from pure SiC powder with non-oxide sintering aids. Conventional ceramic forming processes are used and the material is sintered in an inert atmosphere at temperatures up to 2000ºC or higher. Both forms of Silicon Carbide (SiC) are highly wear resistant with good mechanical properties, including high temperature strength and thermal shock resistance.